摘要
利用应变SiGe Si异质pn结电容 电压 (C V)特性确定SiGe禁带宽度的技术 .该技术根据SiGe Si异质pn结C V实验曲线 ,计算出pn结接触电势差 ,并得到SiGe Si的价带偏移量和导带偏移量 ,进而求得SiGe禁带宽度 .该技术测试方法简便 ,其过程物理意义清晰 ,既适用于分立的SiGe Si异质pn结 ,也可直接分析SiGe Si异质结器件中的SiGe禁带宽度 .实验结果与理论计算及其他相关文献报道的结果符合较好 .
A pn heterojunction C?-V technique used to determine the bandgap of SiGe strained layers is presented in this paper. The SiGe bandgap is analyzed and calculated by acguiring the built-in potential and discontinuities of valence and conduction bands, according to the C?-V profile of the stained SiGe/Si pn heterojunction. This technique is much more convenient and the experimental results agree very well with the theoretical and published calculations, indicating that the method is correct. This method is suitable for not only the bandgap of the single SiGe/Si pn heterojunctions, but also that of the SiGe/Si devices with SiGe/Si pn heterojunctions.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第1期235-238,共4页
Acta Physica Sinica
基金
模拟集成电路国家重点实验室基金(批准号:99JS09.3.1DZ0111)资助的课题
