摘要
为研究互补金属氧化物半导体(CMOS)工艺静态随机处理内存(SRAM)脉冲中子辐射效应机理,对SRAM翻转效应进行了蒙特卡罗模拟。该模拟基于脉冲中子辐照下SRAM翻转是单粒子翻转的叠加的假设,计算了单位翻转和伪多位翻转在总翻转数中的百分比。在西安脉冲反应堆上对3种特征尺寸商用SRAM开展了脉冲工况实验研究,得到了单位翻转和伪2位翻转数据,结合模拟结果分析了SRAM在脉冲中子作用下的翻转机制。
For the purpose of investigating pulsed neutron radiation effect on Complementary Metal Oxide Semiconductor（CMOS） Static Random Access Memory（SRAMs）,a Monte Carlo simulation method based on the hypothesis that the upsets are caused by the super positioning of Single Event Upset（SEUs） is presented. In the simulation, the percentages of SingleBit Upset（SBU） and pseudo Multiple Bit Upset（MBU） bits in total induced upset bits are calculated. Experiments on commercial SRAMs of three feature sizes are performed on Xi＇an Pulsed Reactor under pulsed irradiation condition. Upset bits of SBU and Pseudo DBU obtained from the experiments, are shown to agree quite well with the simulation results. The mechanism of pulsed neutron inducing upsets is analyzed.
出处
《太赫兹科学与电子信息学报》
2016年第5期800-804,共5页
Journal of Terahertz Science and Electronic Information Technology
关键词
脉冲中子
单粒子翻转
伪多位翻转
静态随机存储器
pulsed neutron
Single Event Upset
Pseudo Multiple Bit Upset
Static Random Access Memory
