摘要
The bottom-gate structure ZnO based thin film transistors （ZnO-TFTs） using Bi1.5Zn1.0Nb1.507 （BZN） thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400℃ obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10^-7 A/cm2 ordoff current ratio and field effect mobility of ZnO-TFTs annealed at 400℃ are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300℃. When the annealing temperature is 400℃, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21×10^12cm^-2.
The bottom-gate structure ZnO based thin film transistors （ZnO-TFTs） using Bi1.5Zn1.0Nb1.507 （BZN） thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400℃ obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10^-7 A/cm2 ordoff current ratio and field effect mobility of ZnO-TFTs annealed at 400℃ are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300℃. When the annealing temperature is 400℃, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21×10^12cm^-2.
基金
Project supported by the National Natural Science Foundation of China(Nos.51332003,51202184)
the International Science&Technology Cooperation Program of China(Nos.2010DFB13640,2011DFA51880)
the "111 Project" of China(No.B14040)
