摘要
针对广域光-接触多探针方法测量光刻胶表面形貌的需要,设计制作了Si基Si_3N_4弹性膜独立多探针,该探针呈9×9二维阵列分布。先利用ANSYS有限元软件分析探针Si_3N_4弹性薄膜的厚度和面积尺寸对探针测量范围的影响规律,得到了优化的几何参数。然后基于仿真结果,运用微机电系统(MEMS)技术中的硅基工艺、薄膜工艺和光刻工艺完成了多探针硅杯的腐蚀、弹性薄膜的沉积及SU-8胶质探针的制作,制备出独立多探针。初步测量Si基Si_3N_4弹性膜独立多探针单元的各项参数表明:Si_3N_4弹性膜的长度平均值为399.4μm,最大偏差为1.8%;SU-8胶质探针的尺寸为Φ99.1μm×27.8μm,最大偏差分别为1.9%和9.8%;探针间的平均距离为1.500 6 mm,最大偏差为0.6%。该探针的结构设计合理,制作工艺可行,可以用于大范围、快速测量方法。
A novel Si-based Si_3N_4 elastic film independent multi-probe was designed and fabricated based on the MEMS technology in order to measure the photoresist surface profile by wide-area optical contact multi-probe with high speed.The multi-probe is arranged in two-dimensional-grid of 9×9.Firstly,the influences of the thickness and area of the Si_3N_4 elastic film on the probe measurement range were analyzed by ANSYS finite element software and the optimized geometric parameters of the multi-probe were obtained.Then,based on the simulation results,the multiprobe silicon cup was completed by anisotropic and isotropic etching successively,the multi-probe Si_3N_4 elastic film was deposited by the plasma enhanced chemical vapor deposition（PECVD）and the SU-8 resist probe was obtained by the micro-electromechanical system（MEMS）technology,including the Si-based process,film process and lithography process,finally the independent multi-probe was fabricated.The geometric parameters of the Si-based Si_3N_4 elastic film independent multi-probe units were measured.The results show that the average length of the Si_3N_4 elastic film is 399.4μm,and the maximum deviation value is 1.8%.The average diameter and height of the SU-8 resist probe areΦ99.1μm and 27.8μm,and the maximum deviation values are 1.9% and 9.8%,respectively.The average interval between the probes is 1.500 6 mm,and the maximum deviation value is 0.6%,which is important for data processing of the optical contact multi-probe measurement.The results demonstrate the rationality of the independent multiprobe structure and the feasibility of the fabrication process,and the probe can be used for a wide-area and high speed measurement method.
出处
《微纳电子技术》
北大核心
2016年第8期541-546,551,共7页
Micronanoelectronic Technology
基金
国家自然科学基金青年项目(51205043)
高等学校博士学科点专项科研基金新教师基金资助项目(20120041120033)
