摘要
The thermal-electrical characteristic of a GaN light-emitting diode （LED） with the hybrid transparent conductive layers （TCLs） of graphene （Gr） and NiOx is investigated by a finite element method. It is indicated that the LED with the compound TCL of 3-layer Gr and 1 nm NiOx has the best thermal-electrical performance from the view point of the maximum temperature and the current density deviation of multiple quantum wells, and the maximum temperature occurs near the n-electrode rather than p-electrode. Furthermore, to depress the current crowding on the LED, the electrode pattern parameters including p- and n-electrode length, p-electrode buried depth and the distance of n-electrode to active area are optimized. It is found that either increasing p- or n-electrode length and buried depth or decreasing the distance of n-electrode from the active area will decrease the temperature of the LED, while the increase of the n-electrode length has more prominent effect. Typically, when the n-electrode length increases to 0.8 times of the chip size, the temperature of the GaN LED with the inm NiOx/3-1ayer-Gr hybrid TCLs could drop about 7K and the current density uniformity could increase by 23.8%, compared to 0.4 times of the chip size. This new finding will be beneficial for improvement of the thermal- electrical performance of LEDs with various conductive TCLs such as NiOx/Gr or ITO/Gr as current spreading layers.
The thermal-electrical characteristic of a GaN light-emitting diode （LED） with the hybrid transparent conductive layers （TCLs） of graphene （Gr） and NiOx is investigated by a finite element method. It is indicated that the LED with the compound TCL of 3-layer Gr and 1 nm NiOx has the best thermal-electrical performance from the view point of the maximum temperature and the current density deviation of multiple quantum wells, and the maximum temperature occurs near the n-electrode rather than p-electrode. Furthermore, to depress the current crowding on the LED, the electrode pattern parameters including p- and n-electrode length, p-electrode buried depth and the distance of n-electrode to active area are optimized. It is found that either increasing p- or n-electrode length and buried depth or decreasing the distance of n-electrode from the active area will decrease the temperature of the LED, while the increase of the n-electrode length has more prominent effect. Typically, when the n-electrode length increases to 0.8 times of the chip size, the temperature of the GaN LED with the inm NiOx/3-1ayer-Gr hybrid TCLs could drop about 7K and the current density uniformity could increase by 23.8%, compared to 0.4 times of the chip size. This new finding will be beneficial for improvement of the thermal- electrical performance of LEDs with various conductive TCLs such as NiOx/Gr or ITO/Gr as current spreading layers.
基金
Supported by the Foundation of the State Key Laboratory of Mechanical Transmission of Chongqing University under Grant Nos SKLMT-KFKT-201419 and SKLM-ZZKT-2015Z16
the National High-Technology Research and Development Program of China under Grant No 2015AA034801
the National Natural Science Foundation of China under Grant Nos 11374359,11304405,11544010 and 11547305
the Chongqing Education Commission Scientific Project under Grant No KJ132209
the Natural Science Foundation of Chongqing under Grant Nos cstc2013jcyjA50031,cstc2015jcyjA50035 and cstc2015jcyjA1660
the Fundamental Research Funds for the Central Universities under Grant Nos CDJZR14135502,CDJZR14300050,106112016CDJZR288805 and 106112015CDJXY300002
the Sharing Fund of Large-scale Equipment of Chongqing University under Grant Nos 201512150017,201512150029 and 201512150030
