摘要
利用在一个单元上可以存储多位信息的赛道存储单元,设计了在近阈值电源电压下工作的非易失SRAM。通过恰当选择赛道存储单元的设计参数,并利用正向衬底偏压等技术,使其能在近阈值电源电压(0.5V)下可靠工作。该非易失SRAM与电源门控技术配合使用,可以解决在近阈值环境下泄漏电流占比过大的问题。仿真结果显示,在典型应用下,可降低传感网芯片中存储器部分能耗的40.9%。
A near threshold voltage non-volatile SRAM （nvSRAM） was designed by using the racetrack memory cells which could storage multiple bits in a single cell. By discussing and properly choosing the parameters of the racetrack memory cell as well as adopting forward body bias technology, the proposed nvSRAM was made operate at near threshold supply voltage （0. 5 V）. It was combined with the power gating technology to solve the problem that the leakage currents would dominate the total currents in the design of near-threshold circuit. Simulation results showed that the energy consumption of the memory in the sensor network SoC was reduced by 40.9% in a typical condition.
出处
《微电子学》
CAS
CSCD
北大核心
2016年第3期398-401,共4页
Microelectronics
基金
国家自然科学基金资助项目(61271269)
国家高技术研究发展(863计划)资助项目(2013AA01320)
北京市青年英才计划资助项目(YETP0102)
关键词
非易失存储器
近阈值电路
赛道存储单元
Non-volatile memory
Near-threshold circuit
Racetrack memory cell
