摘要
面向无源超高频射频识别标签芯片设计了一种低成本的非易失存储器(NVM)。采用PMOS晶体管实现存储单元,制造工艺与标准CMOS工艺兼容,可以降低制造成本。提出了一种新型的操作模式,可减轻写操作对栅氧的破坏。存储器中的所有存储单元共享一个灵敏放大器,数据通过共享的灵敏放大器依次串行读出,这样既节省了面积,又降低了读操作的功耗。基于0.18μm标准CMOS工艺设计实现了存储容量为1 kbit的存储器芯片,该存储器的核心面积为0.095 mm2,并完成了实测。实测结果表明,电源电压为1.2 V,读速率为1 Mb/s时,功耗为1.08μW;写速率为3.2 kb/s时,功耗为44μW。
A low-cost non-volatile memory（ NVM） was designed for the passive ultra high frequency radio frequency identification device（ RFID） tag chips. The memory bit cell was composed of conventional single-poly PMOS transistors to reduce the cost,and the fabrication process was compatible with the standard COMS process. A new operation model was proposed,which can reduce the destroy to the oxide layer in the write operation. The memory cell array in the memory has only one sense amplifier,the data are serial read out successively through the sharing sense amplifier. It can reduce both the memory size and the power consumption of the read operation. A 1 kbit memory chip with the size of0. 095 mm2was designed and implemented in a 0. 18 μm standard CMOS process,and the test of the memory chip was carried out. The measured results indicate that the supply voltage is 1. 2 V,the power consumption of the memory is 1. 08 μW at the read rate of 1 Mb /s and 44 μW at the write rate of3. 2 kb /s,respectively.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第7期488-494,共7页
Semiconductor Technology
基金
国家科技支撑计划资助项目(2012BAH20B02)
国家高技术研究发展计划(863计划)资助项目(2012AA012301)
国家科技重大专项资助项目(2012ZX03004007-002)
自然科学基金资助项目(61306027)
