摘要
Si C以其优异的物理化学性能在很多领域都有着广泛的应用前景,做为第三代半导体材料,Si C单晶是制作高频、大功率电子器件的理想材料。针对用于单晶生长的高纯Si C粉料的合成方法与合成工艺的研究现状进行了阐述,并对不同合成方法优缺点进行了评述,不同合成工艺对合成产物的影响进行了总结,提出了生长单晶用Si C粉料的研究方向。
Si C has a broad application prospect in many fields because of its excellent physical and chemical properties. As the third generation of semiconductor materials, Si C single crystal is an ideal material to produce high frequency, high power electronic devices. The development of synthesis methods and synthesis technology for high purity Si C powder that used for single crystal growth are reported. The advantages and disadvantages of these methods are estimated. And the influences of different synthesis technology for synthesis of product are summarized. Finally, the research direction of synthesis of Si C powder that used for single crystal growth is also suggested.
出处
《电子工艺技术》
2016年第3期128-134,共7页
Electronics Process Technology
基金
国家国际科技合作专项基金项目(项目编号:NO.2014DFR10270)
山西省自然科学基金项目(项目编号:NO.2014011016-8)
关键词
SIC
生长单晶
粉料
合成
silicon carbide
single crystal growth
powder
synthesis
