摘要
为制备高雾度、高透过和高导电透明导电薄膜玻璃,采用常压CVD法在硼硅玻璃基板上分别以单丁基三氯化锡(MBTC)为前驱物、三氟乙酸(TFA)为掺杂剂、去离子水为催化剂,制备了Sn O_2:F透明导电薄膜。研究了不同水用量对薄膜雾度的影响,并分析影响雾度变化的机理。结果表明:通过调节水的用量可实现高雾度、高透过和高导电薄膜的生成。随着水用量的增加,薄膜平均晶粒尺寸、结晶度和雾度先增大后减小;当水用量为MBTC摩尔量的1.5倍时,制备出雾度为14.3%、可见光透过率为76.8%、方块电阻为3.2?/□的薄膜。水的加入和用量的调节有效的解决了雾度和透过率之间相互影响的难题。
The fluorine-doped tin oxide（SnO2：F） transparent conductive film was prepared via atmospheric pressure chemical vapor deposition （APCVD） on borosilicate glass substrates with monobutyltin trichloride （MBTC）, trifluoroacetic acid and deionized water as a precursor, a dopant and a catalyst, respectively. The effect of content of H2O on the haze of the film and mechanism was investigated. The results show that the film of high haze, high transmission and high conductivity can be obtained via the control of water content, and the average crystal size, the crystallinity and the haze of film firstly increase and then decrease with the increase of H2O content. The film prepared at the molar ratio of H2O/MBTC of 1.5 has a high haze of 14.3%, a visible light transmittance of 76.8% and a sheet resistance of only 3.2 Ω/□. The addition of water and the control of water content in the film can solve the problem of the interaction between haze and transmittance.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2016年第4期561-565,共5页
Journal of The Chinese Ceramic Society
基金
国家科技支撑计划项目(2013BAJ15B04)
海南省重大科技项目(ZDZX2013002-2)资助
关键词
水含量
常压化学气相沉积
雾度
氟掺杂氧化锡薄膜
water content
atmospheric pressure chemical vapor deposition
haze
fluorine-doped tin oxide film
