摘要
以MgO-CeO2为烧结助剂,采用热压烧结工艺在1850℃制备了SiC含量为80wt%的SiC-AlN复相陶瓷。研究了不同助剂含量对复相陶瓷致密性与导热性能的影响。结果表明：适量的烧结助剂能够对SiC-AlN复相陶瓷起到促进烧结作用。烧结助剂含量为6wt%时,样品显气孔率偏大;当助剂含量提高至8wt%~14wt%时,样品显气孔率显著降低,能够完全烧结致密化。复相陶瓷在烧结助剂含量为10wt%时获得最佳的致密性,其显气孔率仅为0.14%。在烧结助剂含量为8wt%时,样品具有最高的热导率51.72W·m-1·K-1。复相陶瓷的热导率主要受样品致密性和晶界相的影响,不足或过量的烧结助剂都会使样品的热导率降低。
The densification and thermal conductivity of SiC-AlN multiphase ceramics with 80wt% SiC at different additives contents are investigated,in which the samples were sintered by hot pressing at 1850℃ with MgO-CeO2 as sintering additives. A proper content of additives will benefit the sintering of SiCAlN ceramics. There were plenty of pores in the samples as the content of additives was 6wt%. While the content of additives ranged from 8wt% to 14wt%,the densification of the samples were excellent. The multiphase ceramics reached the minimum porosity of 0. 14% when 10wt% additives were added. As the content of additives was 8wt%,the thermal conductivity of the samples achieved the highest value of 51.72 W·m- 1·K- 1.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2016年第2期361-365,共5页
Journal of Synthetic Crystals
基金
江苏高校优势学科建设工程项目(PAPD)
长江学者和创新团队发展计划(PCSIRT
IRT1146)
关键词
碳化硅-氮化铝
热压烧结
致密性
导热性能
SiC-AlN
hot pressing sintering
densification
thermal conductivity
