期刊文献+

Se和MoSe_2纳米片的结构和发光性能 被引量:4

Structures and photoluminescence properties of Se and SeMo_2 nanoflakes
下载PDF
导出
摘要 以Se粉和MoO_3粉为源材料,利用热丝化学气相沉积在N_2中制备了Se和MoSe_2纳米片.利用场发射扫描电子显微镜、透射电子显微镜、X射线能谱仪、显微Raman光谱仪和X射线光电子谱仪对Se和MoSe_2纳米片的结构和组成进行了系统研究.结果表明:Se粉和M0O_3粉的混合与否直接影响了Se和MoSe_2纳米片的形成和结构;当Se粉和MoO_3粉充分混合时形成Se纳米片,而Se和MoO_3粉分开放置时则形成MoSe_2纳米片.研究发现这是由于Se和MoO_3粉的混合与否使Se和MoO_3在气相中的不同反应所致.对Se和MoSe_2纳米片的发光性能研究表明,它们分别产生了774,783和784 nm的发光峰,不同于单层MoSe_2纳米片的发光性能.这些结果丰富了对二维Se基纳米材料的合成和光学性能的知识,有助于对Se基二维纳米材料的光电器件的研制. Se and MoSe2 nanoflakes are prepared in N2 environment by hot filament chemical vapor deposition through using Se and MoO3 powders as the source materials.The structures and compositions of Se and MoSe2 nanoflakes are systemically studied by using field emission scanning electron microscope,transmission electron microscope,energy dispersive X-ray spectroscope,micro-Raman spectroscope,and X-ray photoelectron spectroscope.The results indicate that the mixing of the Se and MoO3 powders directly affects the formations and structures of Se and MoSe2 nanoflakes.When the Se and MoO3 powders are fully mixed,the Se nanoflakes are formed,however the MoSe2 nanoflakes are formed under no mixture of Se and MoO3 powders.This is due to the fact that different reactions of Se and MoO3 powders in gas environment with or without mixing the Se and MoO3 powders are generated.The study of photoluminescence properties indicates that the photoluminescence peaks are generated at about 774,783 nm and 783,784 nm for the Se and MoSe2 nanoflakes,respectively,which are different from the photoluminescence properties of monolayer MoSe2 nanosheet.These outcomes can enrich our knowledge of the synthesis and optical properties of two-dimensional Se-based nanomaterials and will contribute to the development of optoelectronic devices of two-dimensional Se-based nanomaterials.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2016年第3期316-322,共7页 Acta Physica Sinica
基金 国家自然科学基金(批准号:11474325)资助的课题~~
关键词 Se和MoSe2纳米片 化学气相沉积 发光 Se and MoSe2 nanoflakes chemical vapor deposition photoluminescence
  • 相关文献

参考文献29

  • 1Vishwanath S, Liu X, Rouvimov S, CMende P, Azcatl A, McDonnell S, Wallace R M, Feenstra R M, Furdyna J K, Jena D, Xing H G 2015 2D Mater. 2 024007. 被引量:1
  • 2赖占平 2013 物理学报 62 056801. 被引量:2
  • 3Ostrikov K, Neyts E C, Meyyappan M 2013 Adv. Phys. 62 113. 被引量:1
  • 4谢凌云, 肖文波, 黄国庆, 胡爱荣, 刘江涛 2014 物理学报 63 057803. 被引量:3
  • 5Nourbakhsh A, Cantoro M, Vosch T, Pourtois G, Clemente F, van der Veen M H, Hofkens J, Heyns M M, Gendt S D, Sels B F 2010 Nanotechnology 21 435203. 被引量:1
  • 6Xia J, Huang X, Liu L Z, Wang M, Wang L, Huang B, Zhu D D, Li J J, Gu C Z, Meng X M 2014 Nanoscale 6 8949. 被引量:1
  • 7Hankare P P, Patil A A, Chate P A, Garadkar K M, Sathe D J, Manikshete A H, Mulla I S 2008 J. Cryst. Growth 311 15. 被引量:1
  • 8Shaw J C, Zhou H, Chen Y, Weiss N O, Liu Y, Huang Y, Duan X 2014 Nano Res. 7 511. 被引量:1
  • 9Wang X, Gong Y, Shi G, Chow W L, Keyshar K, Ye G, Vajtai R, Lou J, Liu Z, Ringe E, Tay B K, Ajayan P M 2014 ACS Nano 8 5125. 被引量:1
  • 10Wang B B, Zhu M K, Ostrikov K, Shao R W, Zheng K 2015 J. Alloys Compd. 647 734. 被引量:1

共引文献3

同被引文献8

引证文献4

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部