期刊文献+

飞秒激光脉冲数对P型HgCdTe激光打孔成结效果的影响 被引量:1

Influence of number of laser pulses on PN junction formation in p-Hg Cd Te induced by femtosecond laser drilling
下载PDF
导出
摘要 飞秒激光对p型Hg Cd Te打孔形成PN结.该实验基于1 k Hz低重复频率飞秒激光采用不同脉冲数在p型Hg Cd Te上打孔形成尺寸不同的微孔结构.实验发现脉冲数是影响成结效果的重要参数.激光诱导电流(LBIC)检测表明,随着脉冲数由单个增至10个,微孔侧壁反型层宽度由13.5μm减小到10.5μm.当脉冲数增大至100个时,微孔LBIC信号曲线已严重偏离PN结所对应的正负峰对称线形,意味着结特性趋于失效.对LBIC曲线拟合表明,单脉冲打孔形成的PN结给出最大的载流子扩散长度,约为17μm,而10个脉冲对应的环孔PN结扩散长度则减小为12μm. Femtosecond laser drilling induces PN junction in p-Hg Cd Te. In this work,femtosecond laser with repetition rate of 1 k Hz was used to generate different micrometer-sized holes. It was found that the pulse number is an important parameter which influences the effect of junction formation. Laser beam induced current( LBIC) characterization shows that the inversion layer thickness reduces from13. 5 μm to 10. 5 μm when the pulses increase from one to ten. The LBIC profile of a hole created with one hundred pulses deviates severely from the line shape of ideal PN junction,resulting in large leakage current. In addition,the fitting of LBIC curves shows that the diffusion length of the hole created by a single pulse is 17 μm whereas the one created by ten pulses reduces to 12 μm.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2016年第1期52-56,共5页 Journal of Infrared and Millimeter Waves
基金 国家自然基金(61474073)~~
关键词 碲镉汞 PN结 激光束诱导电流 飞秒激光打孔 HgCdTe PN junction laser beam induced current femtosecond laser drilling
  • 相关文献

参考文献15

  • 1Rogalski A.HgCdTe infrared detector material:history,status and outlook[J].Reports on Progress in Physics,2005,68(10):2267. 被引量:1
  • 2Baker I M,Maxey C D.Summary of HgCdTe 2D array technology in the U.K[J].Journal of Electronic Materials,2001,30(6):682-689. 被引量:1
  • 3Zha F X,Zhou S M,Ma H L,et al.Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe[J].Applied Physics Letters,2008,93(15):151113. 被引量:1
  • 4Zha F X,Li M S,Shao J,et al.Femtosecond laser-drilling-induced HgCdTe photodiodes[J].Optics Letters,2010,35(7):971-973. 被引量:1
  • 5Qiu w c,Cheng X A,Wang R,et al.Novel signal inversion of laser beam induced current for femtosecond-laserdrilling-induced junction on vacancy-doped p-type HgCdTe[J].Journal of Applied Physics,2014,115 (20). 被引量:1
  • 6周松敏,查访星,郭青天,殷菲,李茂森,马洪良,张波.飞秒激光对P型碲镉汞打孔的形貌和PN结特性研究[J].红外与毫米波学报,2010,29(5):337-341. 被引量:4
  • 7Eaton S M,Zhang H B,Herman P R.Heat accumulation effects in femtosecond laser-written waveguides with variable repetition rate[J].Optics Express,2005,13(12):4708-4716. 被引量:1
  • 8叶振华,胡晓宁,蔡炜颖,陈贵宾,廖清君,张海燕,何力.激光束诱导电流在HgCdTe双色探测器工艺检测中的应用[J].红外与毫米波学报,2005,24(6):459-462. 被引量:6
  • 9Hong X K,Lu H,Zhang D B.Study on the structural characteristics of HgCdTe photodiodes using laser beam-induced current[J].Optical and Quantum Electronics,2013,45 (7):623-628. 被引量:1
  • 10Yin F,Hu W D,Zhang B,et al.Simulation of laser beam induced current for HgCdTe photodiodes with leakage current[J].Optical and Quantum Electronics,2009,41(11-13):805-810. 被引量:1

二级参考文献31

共引文献7

同被引文献8

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部