摘要
针对用于制备非晶硅薄膜的PECVD设备反应室的流体场进行了模拟仿真,并实验制备了相对应条件下的非晶硅薄膜,利用台阶仪完成了对薄膜厚度的测量,对比仿真结果,发现薄膜的厚度分布情况与基片表面附近的气流分布情况密切相关,获得均匀性优于2.5%非晶硅薄膜。
The reaction chamber of PECVD equipment was simulated by using Fluent software and amorphous silicon thin films were prepared by PECVD.The film thickness was measured by step apparatus,and by comparing with the simulation results,it indicates that the thickness distribution and airflow distribution of the substrate surface near the film is closely related,and the intake flow of the reaction is positively correlated with the chamber deposition rate.The amorphous silicon thin films with the uniformity higher than 2.5% were obtained.
出处
《半导体光电》
CAS
北大核心
2015年第6期951-953,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61177035
61421002)
四川省科技项目(2011GZ0003
2012GZ0051)
中电集团CCD研发中心项目
