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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co_2MnSi/graphene/n-Ge junction

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co_2MnSi/graphene/n-Ge junction
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摘要 We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium(Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height(SBH) occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium(Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height(SBH) occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第2期426-429,共4页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China(Grant No.61504107) the Fundamental Research Funds for the Central Universities,China(Grant Nos.3102014JCQ01059 and 3102015ZY043)
关键词 Co2MnSi/graphene/n-Ge junction Fermi-level depinning Schottky barrier height metal-induced gap states (MIGS) Co2MnSi/graphene/n-Ge junction, Fermi-level depinning, Schottky barrier height, metal-induced gap states (MIGS)
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