摘要
通过研究射频功率放大器非线性失真产生的理论原因,着重分析了非线性失真中的三阶互调失真(IMD_3)。基于功率晶体管AFT27S006N设计了一款应用于TD-LTE基站的功率放大器。经测试,此功放峰值功率为7 W,PAE为53%,P_(out)回退到1 W时IMD_3达到了-43dBc,符合设计指标。
In this paper,it is focus on the analysis of IMD3 in nonlinear distortion by studying the theoretical reasons of the non-linear distortion of the RF power amplifier.According to the power transistor AFT27S006 N,we have designed a power amplifier which applied in the TD-LTE base station.After being tested,it meets the design standards ：the peak power is 7 W,the PAE is53 %,and while the P_（out）back-off to 1 W,the IMD_3 reaches to-43 dBc,consistent with design indicators.
出处
《电子技术应用》
北大核心
2016年第1期25-27,共3页
Application of Electronic Technique
