摘要
为解决半导体桥工程应用中出现的问题,根据半导体桥作用机理,对影响半导体桥芯片性能的因素,如Si O2层厚度、电极材料及厚度、桥区形状等进行了实验研究和分析,并提出工艺控制措施。研究结果对半导体桥芯片的制作技术具有参考意义。
Aimed at the problems of semiconductor bridge（SCB） application in industry, based on the function mechanism, the property influence factors of semiconductor bridge chip, such as Si O2 layer thickness, the electrode material and thickness, shape of bridge, were experimental researched and analyzed, as well as the improvement measures were proposed. The results of the study give reference for the production technique of SCB chip.
出处
《火工品》
CAS
CSCD
北大核心
2015年第4期13-16,共4页
Initiators & Pyrotechnics
基金
民爆半导体雷管研改建平台建设(051033)
关键词
半导体桥
瞎火
性能
影响因素
Semiconductor bridge
Misfire
Property
Influence factor
