摘要
采用直流辉光放电化学气相沉积设备,以H2/CH4/Ar混合气体为工作气体,在2英寸硅片沉积出了晶粒尺寸为20~40 nm的纳米金刚石薄膜。采用SEM、Raman、微摩擦试验机等分析了不同CH4浓度、Ar浓度对NCD薄膜生长特性的影响。研究结果表明：金刚石薄膜的晶粒尺寸随着CH4浓度的增加而减小,但是过高的CH4浓度会导致石墨相大量生成;随着Ar浓度的增加,金刚石薄膜的晶粒尺寸逐渐细化,但过量Ar的掺入会降低金刚石薄膜的质量;在合适的工艺参数下,薄膜摩擦系数最低可以降低到0.12,NCD薄膜的最大沉积直径为140 mm。
The nano-crystalline diamond thin films with grain size ranging from 20 nm to 40 nm were synthesized on 2 inch silicon wafer by direct current glow discharge chemical vapor deposition （DC- GDCVD）. The working gas composited by H2, CH4 and Ar. The morphology and structure characteristics of diamond films impacted by different concentrations of CH4 and Ar were observed by field-emission scanning electron microscope （FESEM） , Raman spectroscopy and micro friction testing machine. The result shows that the grain size will refine as the CH4 concentration increasing. However, massive graphite phase would generate at the atmosphere of excess CH4. In addition, the doping of Ar could also improve the refining as the CH4 concentration increasing, whereas it was at the cost of low film quality. Under optimal parameters, the smallest friction coefficient of NCD thin films could reach 0. 12 and the largest deposition diameter of NCD thin films is 140 ram.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2015年第10期2746-2750,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(11175137
A050610)
关键词
直流辉光放电
化学气相沉积
纳米金刚石
摩擦系数
DC glow-discharge
chemical vapor deposition
nano-crystalline diamond
friction coefficient
