期刊文献+

First-principle study on the optical response of phosphorene 被引量:3

First-principle study on the optical response of phosphorene
原文传递
导出
摘要 The optical response of phosphorene nanostructures was studied using time-dependent density func- tional theory (TDDFT). Compared with the absorption spectrum of graphene, that of the phospho- rene nanostructure exhibits high absorbance in the ultraviolet region, which indicates a high light absorptivity. In a low-energy resonance zone, a spectral band extends to the entire near-infrared re- gions. When the impulse excitation polarizes in the armchair-edge direction, the low-energy plaslnon in a few-layer phosphorene nanostructure shows an apparent long-range charge-transfer excitation but is significantly less pronounced along the zigzag-edge direction. The edge configuration signifi- cantly affects the absorption spectrum of monolayer phosphorene nanostructures. The armchair-edge and the zigzag-edge serve different functions in the absorption spectrum. Moreover, the absorption spectrum of the few-layer phosphorene nanostructure changes with the number of layers when the impulse excitation polarizes in the armchair-edge direction. In addition, the change in tile low-energy resonance zone is significantly different from that in the high-energy resonance zone. The optical response of phosphorene nanostructures was studied using time-dependent density func- tional theory (TDDFT). Compared with the absorption spectrum of graphene, that of the phospho- rene nanostructure exhibits high absorbance in the ultraviolet region, which indicates a high light absorptivity. In a low-energy resonance zone, a spectral band extends to the entire near-infrared re- gions. When the impulse excitation polarizes in the armchair-edge direction, the low-energy plaslnon in a few-layer phosphorene nanostructure shows an apparent long-range charge-transfer excitation but is significantly less pronounced along the zigzag-edge direction. The edge configuration signifi- cantly affects the absorption spectrum of monolayer phosphorene nanostructures. The armchair-edge and the zigzag-edge serve different functions in the absorption spectrum. Moreover, the absorption spectrum of the few-layer phosphorene nanostructure changes with the number of layers when the impulse excitation polarizes in the armchair-edge direction. In addition, the change in tile low-energy resonance zone is significantly different from that in the high-energy resonance zone.
出处 《Frontiers of physics》 SCIE CSCD 2015年第4期73-81,共9页 物理学前沿(英文版)
关键词 phosphorene nanostructures phosphorene nanostructures
  • 相关文献

参考文献4

二级参考文献22

  • 1G. H. Zeng, X. F. Fan, C. LaBounty, E. Croke, Y. Zhang, ,l.Christofferson, D. Vashaee, A. Shakouri, and J. E. Bowers, Cooling power density of SiGe/Si superlattice micro refriger- ators, Volume 793 of Materials Research Society Symposium Proceedings, Materials Research Society, 2004. 被引量:1
  • 2I. Chowdhury, R. Prasher, K. Lofgreen, G. Chrysler, S. Narasimhan, R. Mahajan, D. Koester, R. Alley, and R. Venkatasubramanian, On-chip cooling by superlattice-based thin-film thermoelectries, Nat. Nanotechnol., 2009, 4(4): 235. 被引量:1
  • 3X. Fan, CI. Zeng, E. Croke, C. LaBounty, C. C. Ahn, D. Vashaee, A. Shakouri, and d. E. Bowers, High cooling power density SiGe/Si micro-coolers, Electron. Lett., 2001, 37(2): 126. 被引量:1
  • 4A. Shakouri and Yan Zhang, On-chip solid-state cooling for integrated circuits using thin-film microrefrigerators, IEEE Trans. Comport. Packa9. Teeh., 2005, 28(1): 65. 被引量:1
  • 5J. Zhang, N. G. Anderson, and K. M. Lau, A1GaAs super- lattice microeoolers, Appl. Phys. Lett., 2003, 83(2): 374. 被引量:1
  • 6H. Y. Chiu, V. Perebeinos, Y. M. Lin, and P. Avouris, Con- trollable p-n junction formation in monolayer graphene using electrostatic substrate engineering, Nano Lett., 2010, 10(11): 4634. 被引量:1
  • 7G. Liu, 3. Velasco, and W. Bao, and C. N. Lau, Fabrica- tion of graphene p-n-p junctions with eontactless top gates., Appl. Phys. Lett., 2008, 92(20): 203103. 被引量:1
  • 8S. G. Nam, D. K. Ki, J. W. Park, Y. Kim, J. S. 1Kim, and H. J. Lee, Ballistic transport of graphene p-n-p junctions with embedded local gates, Nanotechnology, 2011, 22(41): 415203. 被引量:1
  • 9B. Oyilmaz, P. Jarillo-Herrero, D. Efetov, D. Abanin, L. Levitov, and P. Kim, Electronic transport and quantum Hall effect in bipolar graphene p-n-p junctions, Phys. Rev. Lett., 2007, 99(16): 166804. 被引量:1
  • 10G. Rao, M. Preitag, H. Y. Chiu, R. S. Sundaram, andP. Avouris, Raman and photocurrent imaging of electrical stress-induced p-n junctions in graphene, ACS Nano, 2011, 5(7): 5848. 被引量:1

共引文献21

同被引文献16

引证文献3

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部