摘要
目的观察低频重复经颅磁刺激(r TMS)刺激右侧前额叶背外侧皮层对脑卒中患者认知及记忆功能的影响。方法脑卒中后记忆功能障碍患者40例,随机分为磁刺激组(n=19)和假刺激组(n=21),分别接受真假1 Hz r TMS治疗。所有患者在治疗前、治疗结束后和治疗结束2个月后分别用蒙特利尔认知评估量表(Mo CA)中文版、洛文斯顿作业疗法认知评估(LOTCA)及行为记忆量表(RBMT)进行测评。结果两组在治疗后及治疗结束2个月时,Mo CA、LOTCA及RBMT评分均有显著升高(P<0.001),磁刺激组改善程度明显优于假刺激组(P<0.01)。结论低频r TMS可以改善脑卒中后认知及记忆功能障碍。
Objective To investigate the effects of low-frequency repetitive transcranial magnetic stimulation（r TMS） on post-stroke disfunction of cognition and memory by stimulating right dorsolateral prefrontal cortex. Methods 40 patients were randomized into the r TMS（n=19） and sham（n=21） groups. The function of cognition and memory were measured before treatment, after treatment and 2 months post-treatment with Montreal Cognitive Assessment（MoCA）, Loewenstein Occupational Therapy Cognitive Assessment（LOTCA） and Rivermead Behaviour Memory Test（RBMT）. Results All scores improved in both groups after treatment and 2 months post- treatment（P〈0.001）, and improved more in the r TMS group than in the sham group（P〈0.01）. Conclusion Low-frequency r TMS may improve the function of memory and cognition after stoke.
出处
《中国康复理论与实践》
CSCD
北大核心
2015年第9期1074-1077,共4页
Chinese Journal of Rehabilitation Theory and Practice
基金
中国康复研究中心课题(No.2012-22)
中央级公益性科研院所基本科研业务费专项资金(No.2013CZ-48)
关键词
脑卒中
重复经颅磁刺激
记忆
认知
stroke
repetitive transcranial magnetic stimulation
memory
cognition
