摘要
太阳能级铸造准单晶硅具有较高的光电转换效率和低的生产成本,是一种具有竞争力的晶硅类太阳能电池材料。本文采用CGSim晶体生长软件,系统分析了拉锭速度对固液界面,晶体氧含量和V/Gn值的影响。结果表明,一方面,随着拉锭速度的增大,固液界面曲率逐渐加大,增加了铸锭边缘区域多晶的形成几率;另一方面,熔体温度逐渐降低,导致晶体氧含量会逐渐减少;同时,拉锭速度大于10 mm/h时,固液界面处V/Gn值均大于临界值。最终,最佳的铸造准单晶硅拉锭速度为10~15 mm/h。
Due to higher solar cell efficiency and lower cost, the quasi-single crystal silicon becomes one of the competitive silicon-based solar cell productions. The influence of pulling rates on the solid-liquid interface, oxygen concentration and V/Gn was analyzed by the CG-sim software. The results show that the curvature of solid-liquid interface was increased with increasing the pulling rates, which increased nucleation frequency of the grains in the ingot edgy area. On the other hand, the melt temperature decreased, resulting in oxygen concentration decreased with increasing the pulling rates. At the same time, the V/Gn value will be more than a critical value when pulling rate is above 10 mm/h. Lastly, the optimized pulling rates for preparing the quasi-single silicon is in the range of 10 mm/h to 15 mm/h.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2015年第9期2471-2475,共5页
Bulletin of the Chinese Ceramic Society
基金
国家自然基金(61366005)
2012宁夏自治区科技支撑项目
宁夏自然基金(NZ13041)
宁夏高等学校科学研究项目(NGY2013006)
2012宁夏自治区留学人员创新团队择优资助项目
北京市博士后基金(2012ZZ-09)
关键词
准单晶硅
固液界面
氧含量
V/Gn
quasi-single silicon
solid-liquid interface
oxygen content
V/Gn
