摘要
利用四探针电阻测试仪、光学显微镜、扫描电镜、电感耦合等离子发射光谱仪、能谱分析等设备,从晶粒尺寸、组织形态以及晶界析出物等对冶金法制备的多晶硅电阻率的影响。结果表明:组织为等轴晶时,电阻率的大小与晶粒大小成正比;在组织为柱状晶时,平行于柱状晶方向的电阻率明显高于垂直方向的电阻率;在纯度较低的多晶硅中,金属杂质易在晶界处偏析,形成金属硅化物相,降低了多晶硅材料的电阻率。
Using a four point resistivity test system,metallographic microscopy,scanning electron microscopy(SEM),inductively-coupled plasma spectrometer(ICP),energy dispersive X-ray spectrometel(EDS) etc.,the influence of grain size,microstructure,chemical composition,precipitation in grain boundaries etc.on electrical properties of multicrystalline silicon prepared by metallurgic method was investigated.The electrical resistivity is directly propotional to the grain size when the microstructure was equiaxied grains....
出处
《机械工程材料》
CAS
CSCD
北大核心
2008年第1期17-20,共4页
Materials For Mechanical Engineering
基金
辽宁省科学计划资助项目(2006222007)
关键词
多晶硅
冶金法
电阻率
晶界
金属硅化物
multicrystalline silicon
metallurgic method
electrical resistivity
grain boundary
metal silicide
