摘要
高纯镍是制造半导体集成电路及微电子行业用电子薄膜材料的原材料。采用电子束熔炼方法制备高纯镍,研究了一次和二次电子束熔炼对高纯镍锭纯度、表面质量和内部铸造缺陷的影响。通过对铸锭宏观形貌的观察和杂质含量的化学分析,发现一次熔炼可将原材料提纯至99.99%,但铸锭仍存在较多宏观铸造缺陷;而二次熔炼充分去除了杂质和气体元素,如Al,Fe,Cu和C,N,O等,最终使镍锭纯度提高至99.995%以上且内部连续一致无集中缩孔、疏松和气孔等缺陷。通过对镍电子束熔炼过程中杂质元素和基体镍的蒸气压的理论计算对比,和对杂质去除率的理论计算,说明了杂质从镍基体分离的方式并验证了化学成分检测的杂质实际去除率。
The high purity nickel was a certain raw material used to prepare electron thin-film materials, which were widely applied in the field of integrated circuit and micro-electronics. Adopting the electron beam melting method to prepare high purity nickel, and the effects of the first （EB1 ） and second （EB2 ） electron beam melting on the purity, surface quality and inner casting defects of ingot were all investigated. Applying observation of surface morphologies in combination with chemical analysis of impurities content of nickel ingots, it suggested that the purity of nickel could approach to 99.99% along with lots of casting defects through EBl , on the contrary, the EB2 removed the impurities completely （i. e. A1, Fe, Cu and C, N, O etc. ）, and made the purity exceed above 99. 995% compa- nying consistent inner structures without intense shrinkages, porosities and any other casting defects. Analogously, the calculation re- sult of discrepancy of evaporation pressure of impurities and matrix and removal ratio of impurities during electron beam melting, sug- gested the separation methods of impurities from the matrix nickel, and evidenced the actual removal ratio of impurities inspected by chemical analysis.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2013年第1期116-122,共7页
Chinese Journal of Rare Metals
基金
国家科技部"十二五"国家科技支撑计划项目(2012BAE06B00)资助
关键词
电子束
熔炼
高纯镍
提纯
electron beam
melting
high purity nickel
purification
