摘要
In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors （FETs） shift in the negative gate voltage direction after Ga^＋ ion irradiation. Smaller threshold voltages, achieved by Ga^＋ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga＋ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to -106. The results indicate that Ga^＋ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.
在这份报纸，我们报导一个方法改变 SnO 的阀值电压<潜水艇class=“ a-plus-plus ”> 2 </sub>并且在里面<潜水艇class=“ a-plus-plus ”> 2 </sub > O <潜水艇class=“ a-plus-plus ”>由 Ga 的 3 只</sub> nanowire 晶体管<啜class=“ a-plus-plus ”>+</sup>离子照耀。不同于在更早的报告的结果， SnO 的阀值电压<潜水艇class=“ a-plus-plus ”> 2 </sub>并且在里面<潜水艇class=“ a-plus-plus ”> 2 </sub > O <潜水艇class=“ a-plus-plus ”>在在 Ga 以后的否定的门电压方向的 3 </sub> nanowire 地效果晶体管(联邦货物税)移动<啜class=“ a-plus-plus “>+</sup>离子照耀。更小的阀值电压，由 Ga 完成了 < 啜 class= “ a-plus-plus ” >+</sup> 离子照耀，为高效、低电压的操作被要求。阀值电压移动能被归因于 Ga 引起的表面缺点的降级 < 啜 class= “ a-plus-plus ” >+</sup> 离子照耀。在照耀以后，当前的开／关比率稍微衰退，但是离 10 仍然靠近 < 啜 class= “ a-plus-plus ” > 6 </sup> 。结果显示那 Ga < 啜 class= “ a-plus-plus ” >+</sup> 离子横梁照耀在改进氧化物 nanowire 联邦货物税的表演起一个重要作用。
