摘要
仿真设计了一款X波段低噪声放大器(LNA),选用NEC公司的高电子迁移率晶体管NE3210S01,直流偏置电路采用双电源供电,采用低阻抗特性的扇形微带短截线代替旁路电容和3λ/4高阻抗线阻止射频信号对直流的影响,用源极负反馈的方法增加稳定性,并采用微带线耦合的方式达到隔直流的效果,借助ADS软件进行设计、仿真和优化。仿真结果显示,放大器在9.5 GHz 10.5 GHz频率范围内增益为(24.2±0.5)d B,噪声系数小于0.8 d B,输入、输出驻波比均小于1.5,结果显示该款低噪声放大器适用于雷达系统。
The simulation designed a x-band low noise amplifier（ LNA）,the amplifier using high electron mobility transistor NE3210S01 of NEC Company,Dc bias circuit to use dual power supply,low impedance characteristics of the fan-shaped microstrip instead of bypass capacitors and 3λ /4 high-impedance line to prevent the effects of RF signal on Dc,applying source negative feedback to increase the stability,and use microstrip line coupling way to achieve dc-blocking effect. With the help of ADS software to design,optimization and simulation,the simulation results show that the amplifier gain is（ 24. 2 ± 0. 5） d B in the9. 5 GHz- 10. 5 GHz frequency,noise coefficient less than 0. 8 d B,input and output VSWR less than 1. 5. The results show that low-noise amplifier can be applied to radar systems.
出处
《杭州电子科技大学学报（自然科学版）》
2015年第4期11-15,共5页
Journal of Hangzhou Dianzi University：Natural Sciences
关键词
高电子迁移率晶体管
扇形微带短截线
高阻线
噪声
负反馈
high electron mobility transistor
fan-shaped microstrip stub
high impedance line
noise
negative feedback
