摘要
提出了一种适合于低电源电压嵌入式闪存系统的高速高抗干扰能力的灵敏放大器。讨论了应用在这个灵敏放大器中的多相位预充、自调节负载及新型的箝位技术。提出的灵敏放大器电路在0.13μm的嵌入式闪存平台上实现。测试结果表明,提出的灵敏放大器达到6ns的访问时间。
sensing and supply. The showed that A new high speed and high noise immunity sense amplifier circuit was proposed. Novel pre-eharge, regulation techniques were adopted to increase access speed and noise immunity under low power circuit was implemented in 0. 13μm CMOS compatible embedded flash technology. Testing results the sense amplifier could reach 6 ns access time.
出处
《微电子学》
CAS
CSCD
北大核心
2015年第3期294-297,302,共5页
Microelectronics
