摘要
采用高频光电导衰退法测试了太阳能电池用p型多晶硅片的少数载流子寿命,细致分析了光注入强度对测试结果的影响。结果显示光电导衰减曲线在靠近尖峰处较宽的时间区域内并按非指数规律快速衰减,当信号衰减到一定程度后逐渐接近指数规律,且随着光注入强度增大,少子寿命的测量结果显著减小。从非平衡载流子的表面复合效应和晶界复合效应出发,对导致该现象的物理机制进行深入解释。
The minority carrier lifetime in p-typed polycrystalline silicon used for solar cells was tested by the high frequency photoconductivity decay method,and the influence of photo injection intensity on the testing re-sult was analyzed in detail. The results show that the decay curve is not exponential damping in a wide area near the peak point,until the signal fade down to lower than half value. In addition,the measured value of the minority carrier lifetime is reduced when reinforcing the photo injection intensity. Based on the surface recom-bination effect and grain boundary recombination effect of the non-equilibrium carriers, we interpreted this physical phenomenon appropriately.
出处
《大学物理实验》
2015年第3期21-24,共4页
Physical Experiment of College
基金
国家自然科学基金项目(51302316)
湖南省自然科学基金项目(13JJ4003)
国防科技大学科研计划项目(JC13-02-09)
关键词
多晶硅
少子寿命
光电导衰退法
表面复合
polycrystalline silicon
minority carrier lifetime
photoconductivity decay method
surface recombination
