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掠入射 X射线反射法测量纳米尺度氮化硅薄膜厚度 被引量:1

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摘要 掠入射X射线反射法是一种薄膜厚度的无损测量方法。采用掠入射X射线反射法测量纳米尺度氮化硅薄膜厚度,拟合模型的建立和测量条件的选择是测量结果准确性的重要影响因素。研究建立了合理的拟合模型,并研究了不同功率、不同步进及每步不同停留时间对测量结果的影响。结果表明,电压40kV、电流40mA、步进0.004°、每步停留时间2s为最佳的测量条件。
出处 《计量技术》 2015年第4期6-9,共4页 Measurement Technique
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