摘要
通过分析CMOS缓冲器过冲及开关噪声的原理,提出了一种新型的低过冲、低开关噪声的缓冲器。该缓冲器采用两种驱动级并联,降低了开关噪声。部分输出级晶体管采用缓冲器结构,控制了输出过冲。该缓冲器简单有效,不需要引入反馈结构。采用0.6μm CMOS工艺设计,经仿真验证,电路具有良好的低开关噪声和低过冲特性。
The principles of overshoot and switch noise of CMOS output buffer were discussed.A novel output buffer designed for low switch noise and overshoot was proposed.Switching noise was lowered by a combination structure of two driving stages.Source followers were adopted to depress the overshoot.The buffer was simple and effective,without the necessity for introducing a feedback circuit.The proposed buffer was designed in a 0.6μm CMOS process.Simulation results showed that the buffer had less switching noise and improved overshoot.
出处
《微电子学》
CAS
CSCD
北大核心
2015年第2期149-152,共4页
Microelectronics
