摘要
采用大光腔结构、真空解理镀膜、腔面非注入区技术制备了980 nm单发光条大功率半导体激光器,其连续输出功率达到12 W。封装后测试,对于同一批量的180只器件进行可靠性测试,经过64 h电老化测试分析,功率基本未发生变化72只,综合成品率达到40%。对失效器件进行综合分析可得,此次试验中,镀膜后分离时产生的膜撕裂是激光器失效的主要原因。
The large optical cavity structure,the vacuum cleavage coating and the cavity surface non-injection technology were used to manufacture the 980 nm single light bar high-power semiconductor laser,and the output optical power of this laser reaches 2 W. After packaging,reliability tests were done for the same batch of 180 devices. After 64 h electrical aging test and analysis,the powers of 72 lasers almost don＇t change,and the comprehensive yield reaches40%. Through failure analysis of the devices,the main reason of laser failure is the film tearing when the films are separated from the bars.
出处
《激光与红外》
CAS
CSCD
北大核心
2015年第4期369-372,共4页
Laser & Infrared
基金
国家自然科学基金(No.611006028)资助
