摘要
采用一种新的液相外延工艺，研制出了具有大光胶结构的Ｖ型槽衬底内条形可见光发射半导体激光器。其光谱波长为７７９～７８４ｕｍ，室温连续工作阈值电流为６０ｍＡ，具有２倍阈值的基模工作时，线性输出光功率可达１８ｍＷ，４ｍＷ下工作寿命已超过３０００小时。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated. Its wavelength ranges from 779 to 784um, threshold current is 60mA at room temperature with CW Operation. The linear laser output power operated at the fundamental mode with two fold threshold values is 18mW. The CW operation time at 4mW is longer than 3000 hours.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1996年第5期18-21,共4页
Spectroscopy and Spectral Analysis
关键词
V型
槽衬底
内条形
大光腔
半导体激光器
V-channeled substrate, Inner stripe, Large optical cavity, Semiconductor laser
