摘要
在不同温度条件下对Cd0.9Zn0.1Te晶片进行In气氛退火热处理,显著提高了Cd0.9Zn0.1Te材料的电阻率。通过实验测量和理论建模计算,得到了1 073、1 023和973K条件下In原子在Cd0.9Zn0.1Te晶片中的扩散系数分别为4.25×10-9 cm2·s-1、9.02×10-10 cm2·s-1和2.17×10-10 cm2·s-1,并且拟合出了1 073~973K范围内扩散系数和温度之间的函数关系表达式D（T）=2.15×exp（-1.9/k0T）及频率因子D0等数据。最后,对实验结果进行了简要的对比和分析解释。
In-diffusion annealing on Cd（0.9）Zn（0.1） Te vlas carried out under different temperatures, the nature of which is a process of diffusion and doping. By using In-diffusion annealing, the resistivity of Cd（0.9）Zn（0.1） Te is evidently improved. Through experimental measurement and theoretical modeling computation, it is figured out that the diffusion coefficient of Inatom in Cd（0.9）Zn（0.1）Te is respectively 4. 25×10-9 cm2 · s-1, 9.02×10-10 cm2 · s-1 and 2.17×10-10 cm2 · s-1 under the temperatures of 1 073, 1 023 and 973 K. Based on this, it is estimated the function between the diffusion coefficient and temperature as and other data such as the frequency factor Do. And also brief comparison and explanations were given on the experimental results.
出处
《半导体光电》
CAS
CSCD
北大核心
2014年第5期846-849,共4页
Semiconductor Optoelectronics
关键词
碲锌镉
电阻率
铟扩散
退火
扩散系数
Cd（0.9）Zn（0.1）Te
resistivity
In-diffusion
annealing
diffusion coefficient
