摘要
对电阻率为10^3-6Ω·cm的In掺杂Cd0．9Zn0．1Te晶片在Te气氛和Cd／Zn平衡蒸汽压下进行了热处理，对电阻率为10^8-9Q·cm的非掺杂晶片则在In气氛和Cd／Zn平衡蒸汽压下进行了热处理。结果表明，In掺杂Cd0．9Zn0．1Te晶片经处理后电阻率可提高3个数量级。非掺杂晶片在In气氛中热处理可很容易地改变导电类型，在热处理温度700℃，In分压6．1×10^-4Pa，退火时间达48h后，电阻率可以提高到2．6×10^9Ω·cm。
The as-grown In-doped Cdo9Zn0.1 Te wafers ofp about 10^3-6 Ωcm were annealed in Te atmosphere under Cd/Zn equilibrium pressures and the as-grown non-doped Cd0.9Zn0.1Te wafers of ρ about 10^8-9 Ω·cm were annealed under In＋Cd/Zn equilibrium pressures. The results show that for the In-doped annealed wafer, the resistivity could be raised by three orders. And it is found that the conductivity type of the non-doped CZT wafers could be changed easily during the In vapor phase annealing process, and the resistivity of the wafer could be raised up to 2.6 × 10^9 Ω·cm when it was annealed at 700℃ under the In pressure of 6.1 × 10^-4 Pa for 48 h.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2007年第3期471-474,共4页
Rare Metal Materials and Engineering
基金
Supported by the National Natural Science Foundation of China (Grant No 10175040) (Grant No 10575069)
Foundation of Shanghai Educational Committee (Grant No 02AK30)
Shanghai Leading Academic Discipline Project T0101
关键词
CDZNTE
热处理
Cd/Zn平衡分压
In扩散
Cd0.9Zn0.1Te annealing
Cd/Zn equilibrium pressures
Te pressure
In pressure
In-deposition
