摘要
介绍了抗辐射加固设计使用的总剂量辐照效应模型,研究了它在时间延迟积分电荷耦合器件(TDI-CCD)电荷转移效率参数衰减中的应用,并通过不同剂量60Coγ辐照试验,验证了该模型在TDI-CCD器件抗辐射加固设计中的应用价值。
In this paper, the model of total dose irradiation effect used for the radiation hardened design is introduced, and its applications in attenuation of the parameters such as charge transfer efficiency （CTE） of TDI-CCD were studied. F radiation experiments with different dose of 60 Co verify the application value of the model in the radiation-hardening design of TDI-CCD.
出处
《半导体光电》
CAS
CSCD
北大核心
2014年第5期782-784,共3页
Semiconductor Optoelectronics
