摘要
A strain-compensated InP-based quantum cascade laser（QCL） structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy（MBE）.By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm^2 in pulsed operation and 0.56 kA/cm^2 in continuous-wave（cw） operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity（HR） coating on its rear facet.
A strain-compensated InP-based quantum cascade laser（QCL） structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy（MBE）.By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm^2 in pulsed operation and 0.56 kA/cm^2 in continuous-wave（cw） operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity（HR） coating on its rear facet.
基金
supported by the National Basic Research Program of China(Grant Nos.2013CB632801 and 2013CB632803)
the National Natural Science Foundation of China(Grant Nos.61306058,61274094,and 61435014)
the Beijing Natural Science Foundation(Grant No.4144086)
