摘要
在铜基体复合电沉积金刚石-铜过渡层,用热丝CVD法对铜基镶嵌结构界面金刚石膜的初期生长过程进行了研究。结果表明:不规则的露头金刚石在CVD生长初期逐渐转化为规则的刻面金刚石,长大速率呈现先增加后降低的趋势,伴随着刻面的形成,在露头金刚石与电镀铜二面角处开始二次形核,二次晶粒与电镀铜形成新的二面角并促进二次形核,如此繁衍长大的结果是二次晶粒填充在露头金刚石颗粒沟槽之间,形成连续的金刚石膜。
The initial growth of diamond coated on Cu-diamond inlay structure interlayer deposited by composite electroplating was investigated using a hot filament chemical vapor deposition method. The results show that with the increase of the growth time, the growth rate of diamond particles decreases and the irregular diamond particles protruding out of the Cu-diamond composite interlayer change into facet particles gradually. Second diamond grains preferentially nucleate at dihedral angle formed by homoepitaxial growth diamond particles and electroplating copper and the new dihedral angle between second crystal and copper promotes new second nuclei. This type of multiplying of second nucleation growth finally fills in the gaps of the large homoepitaxial diamond particles and forms continuously diamond film.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2014年第12期3100-3103,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金(51071070
51271079
50971062)
关键词
金刚石膜
镶嵌
成膜机制
二次形核
diamond films
inlay structure
growth mechanism
second nucleation
