摘要
采用液相法制备了Cu0.4In0.4Zn1.2S2固溶半导体纳米线。对纳米线生长过程的分析表明,纳米线生长遵循溶液-固态-固相机理。前驱体首先受热分解形成Cu1.75S纳米晶,利用其结构中存在的Cu+空位溶解In3+和Zn2+,达到饱和后析出晶体形成Cu0.4In0.4Zn1.2S2固溶半导体纳米线。X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)分析表明,纳米线呈曲折Z形,长度为5μm,具有纤锌矿结构。
Cu0.4In0.4Zn1.2S2 semiconductor nanowires were prepared via solution-based method.The investigation of nanowires suggests that the growth follows the solution-solid-solid mechanism.The precursors of Cu（dedc）2were thermal decomposed into Cu1.75 S,which favored the dissolution of In3＋and Zn2＋for its nature of fast ionic conductor and acted as catalysts for the growth of Cu0.4In0.4Zn1.2S2 semiconductor nanowires.The analysis on the results of X-ray diffraction（XRD）,scanning electron microscopy（SEM）and transmission electron microscopy（TEM）indicate that zigzag nanowires are wurtzite phase,with length of5μm.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2014年第5期682-685,700,共5页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(51102186)
