摘要
硅橡胶的憎水性及憎水迁移性是复合绝缘子能够防治污闪事故的主要原因,快速提高染污硅橡胶材料的表面憎水迁移速率具有重要意义。为此,采用介质阻挡放电(DBD)产生的低温等离子体射流装置对染污后的硅橡胶材料进行了处理,研究了不同等离子体射流处理参数对染污硅橡胶憎水迁移速率的影响。研究结果表明:等离子体射流放电电压、射流处理间距、射流气体体积流量、染污灰密度(NSDD)等因素对提高染污硅橡胶憎水迁移速率有较大影响;外加射流放电电压幅值越高、射流气体体积流量越大,则射流处理后初始接触角越大、憎水迁移性越好;射流处理存在有效间距,等离子体与染污硅橡胶间距超过4 cm后,处理效果将大大降低;染污灰密度增大,射流处理后憎水性改善效果变差。分析实验结论推测等离子体射流作用过程中射流能量是促使憎水迁移速率加快的主要因素。
Hydrophobicity and hydrophobicity transference of silicone rubber are the main reasons that prevent composite insulators from pollution flashover, so it is of great significance to improve the hydrophobicity transfer rate of contaminated silicone rubber surface. After processing contaminated silicone rubber with low-temperature plasma jet produced by dielectric barrier discharge（DBD）, we studied the influence of different plasma jet processing parameters on the hydrophobicity transfer rate of rubber. The results show that the hydrophobicity transference rate is greatly related to the plasma jet＇s voltage, processing distance, and gas volume flow rate, etc., as well as the non-soluble deposit density（NSDD） of the contamination; the initial contact angle increases with the applied voltage and gas volume flow rate, which corresponds to improved hydrophobicity; there is an effective processing distance of plasma jet, for instance the treatment effect significantly drops when the distance is longer than 4 cm. Moreover, increasing the contamination＇s NSDD will impair the plasma jet treatment. Further analysis of the experimental results indicates that the energy of plasma jet is probably the primary cause prompting the hydrophobicity transfer rate of silicone rubber.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2014年第12期3702-3708,共7页
High Voltage Engineering
基金
国网江苏省电力公司科技项目
深圳市科技研发资金(JCYJ20130402145002399)~~
