摘要
运用改进的无规元素等位移模型和玻恩-黄近似,结合电磁场的麦克斯韦方程和边界条件,研究了真空/极性三元混晶薄膜/极性二元半导体衬底三层系统的表面和界面声子极化激元,以AlxGa1-xAs/GaAs和ZnxCd1-xSe/ZnSe为例,获得了表面和界面声子极化激元模的色散关系以及表面和界面模的频率随混晶组分和薄膜厚度的变化关系.结果表明:与二元晶体三层系统以及三元混晶单层薄膜不同,在三元混晶三层异质结系统中存在五支表面和界面声子极化激元模,这五支表面和界面模的频率曲线位于二元晶体和三元混晶的体声子极化激元的禁带区间内,且其能量随混晶组分和薄膜厚度呈非线性变化,三元混晶的"单模"和"双模"性也在色散曲线中体现了出来.
Surface and interface phonon-polaritons in vacuum/polar ternary mixed crystal slab/ polar binary semiconductor substrate trilayer systems are investigated with the modified random-element-isodisplacement model and the Born-Huang approximation, based on the Maxwell＇ s equations with the usual boundary conditions. The numerical results of the surface and interface phononpolariton frequencies as functions of the wave-vector, composition x, and thickness of slab in AlxGa1-xAs/GaAs and ZnxCd1-xSe/ZnSe trilayer systems are obtained and discussed. It is shown that different from trilayer systems of binary crystals and slabs of polar ternary mixed crystals, there are five branches of surface and interface phonon-polariton modes in heterostructure systems, localized in forbidden bands of bulk polaritons in binary crystals and ternary mixed crystal,and the surface and interface modes non-linearly change in frequency with the composition and thickness of ternary mixed crystal slab. The effects of ＂one mode＂ and ＂two mode＂ behaviors of the ternary mixed crystals are shown in the dispersion curves.
出处
《内蒙古大学学报（自然科学版）》
CAS
CSCD
北大核心
2014年第6期578-584,共7页
Journal of Inner Mongolia University：Natural Science Edition
基金
国家自然科学基金资助项目(No.11364028)
内蒙古自然科学基金重大项目资助项目(No.2013ZD02)
内蒙古自然科学基金资助项目(No.2014BS010T)
内蒙古农业大学科技创新团队(培育)项目资助项目(NDPYTD2010-7)
关键词
表面和界面声子极化激元
三元混晶
三层系统
surface and interface phonon-polariton
ternary mixed crystal
trilayer system
