摘要
Techniques for fabricating solution-processed zinc oxide(ZnO)-based thin-film transistors(TFTs)are feasible with solution using various routes.Here,ZnO TFTs were fabricated via sol-gel method using zinc acetate as the starting reagent with different modifiers and solvents.The ZnO thin-film semiconductors with well-controlled,preferential crystal orientation and densely packed ZnO crystals can be prepared with the optimized fabrication conditions,exhibiting excellent field-effect far exceeding those of hydrogenated amorphous silicon(a-Si:H).However,the field-effect characteristics of ZnO TFTs were different for different precursor systems which were constituted by zinc acetate,modifiers and solvents.The co-modification of acetoin and monoethanolamine for the precursor system exhibited higher extent of crystal orientation and field-effect.The maximum mobility of 7.65 cm2V-1s-1 and current on-to-off ratio of^105–106 have been obtained.
基金
supported by the Major State Basic Research Development Program of China(Grant No.10332020)
