摘要
将MoS2电催化剂担载在InP光阴极表面,提升了InP光阴极光电化学分解水产氢性能,确定了最优的MoS2电催化剂担载电量为15 mC·cm-2;在担载前后,开启电势由-100 mV移动至120 mV;在-0.35 V vs RHE时,电流密度由15 mA·cm-2提升至43 mA·cm-2。另外,通过改变入射光强和加入电子牺牲剂的方法进一步研究了MoS2担载InP光阴极产氢反应的限制步骤为光生电子与空穴在InP表面的复合。
MoS2as a co-catalyst was loaded on the surface of a p-InP photocathode to improve the photoelectrochemical property. The optimum electrical quantity of MoS2 loading was 15 mC·cm^-2. After the MoS2 loading, onset potential of an InP photocathode was shifted from-100 mV to 120 mV, and current density was improved from 15 mA·cm^-2to 43 mA·cm^-2at-0.35 V vs RHE. Moreover,the limit step of a MoS2/InP photocathode for hydrogen evolution was investigated by controlling light intensity and adding electron sacrificial agent into the electrolyte. Recombination of the photogenerated electrons and holes was the limit step on a MoS2/InP photocathode for hydrogen evolution.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2014年第9期2093-2098,共6页
Chinese Journal of Inorganic Chemistry
基金
国家重点基础研究发展计划(973计划,2013CB632404,2014CB239303)
国家自然基金(No.51272101)
江苏省自然科学基金(No.BK20130053)资助项目
