摘要
采用较为准确的考虑电子散射和二次电子出射过程的蒙特卡洛模型,研究了不同金属样品的二次电子产额、能谱、出射角度、出射位置,模拟二次电子成像电流和扫描电镜二次电子图像。模拟结果表明,二次电子能谱的最可几能量和峰值半宽度略高于实验结果;二次电子出射角度呈现近似的余弦分布;随着入射电子束能量的提高,二次电子出射范围越大,对应二次电子图像的分辨率降低,但会提高图像衬度;二次电子收集器电压越高,二次电子成像电流越大。模拟得到的扫描电镜二次电子图像与实验结果较为接近。
By employing Monte Carlo method that incorporates the electron scattering and emitting process, the secondary electron （SE） yield, spectroscopy, emitting angle, emitting position, and simulated SE current and the scanning electron microscopy （SEM） image of metal samples are studied and clarified. Simulation results show that the most probable energy and halfpeak width of the SE spectroscopy are greater than the experimental ones; the SE emitting angle obeys the cosine distribution. With the increase of the beam energy, the SE emitting range enlarges and consequently SE image resolution decreases, however the image contrast increases; with the increase of the SE collector voltage, the SE imaging current increases. The simulated SEM image is in agreement with the experimental ones.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第4期334-340,共7页
Research & Progress of SSE
基金
国家自然科学基金资助项目(11175140)
陕西省自然科学基金资助项目(2013JM8001)
关键词
二次电子
扫描电镜
散射
蒙特卡洛模拟
secondary electron
scanning electron microscope
scattering
Monte Carlo simulation
