摘要
从各反应条件对薄膜生长及其性能影响的角度,对CdS缓冲层的制备工艺进行了评述,并对新型无镉缓冲层的研究进展给予了重点介绍。最后展望了薄膜太阳电池缓冲层材料的发展方向,并指出了其发展应用中需要解决的问题。
The preparing process of CdS buffer layers were commented through the influence of reaction conditions on the growth and properties of thin films, and the research development of the new cadmium-free buffer layer was introduced with emphasis. The development direction of the buffer layer materials was finally prospected, and the problems must to be solved in development and application were also discussed.
出处
《化工新型材料》
CAS
CSCD
北大核心
2014年第7期6-8,共3页
New Chemical Materials
基金
国家自然科学基金(61176127,61006085,61274137)
