摘要
采用化学水浴(CBD)法在InCl3.4H2O和CH3CSNH2的酸性混合溶液体系中分别通过改变pH值、溶液nIn:nS浓度比及溶液温度参数依次制备In2S3薄膜,并通过X射线衍射、扫描电镜及紫外/可见/近红外分光光度计等手段系统研究不同工艺下制备In2S3薄膜的晶相结构、表面形貌及光学性能。研究发现:溶液pH值对制备In2S3薄膜有很大的影响,在pH为1.8制备的In2S3薄膜性能较好;溶液nIn:nS浓度比影响薄膜的致密性,在1:4时相对较好;CBD法制备薄膜最佳溶液温度为80℃。在优化工艺参数下制备的In2S3薄膜可见光透过率在90%以上,禁带宽度为2.72eV,能够满足CIGS太阳能电池缓冲层薄膜的要求。
The micmstructures and properties of the In2S3 thin films, grown by chemical bath deposition （CBD） on glass substrates, were characterized with X-ray diffraction, scanning electron microscopy, ultra-violet visible and infra-red light （UV-Vis/NIR） spectroscopy. The influencing deposition conditions were evaluated. The results show that the pH value, concentration ratio of nln and nS, and temperature of the solution significantly affect the micmstructures and proper- ties of the In2S3 films. The transmittance and band-gap of the In2S3 films deposited under the optimized conditions, at a pH value of 1.8, a concentration ratio of 1 ： 4, and a temperature of 80℃, were found to be over 90 % and 2.72 eV, respec- tively.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2013年第5期402-407,共6页
Chinese Journal of Vacuum Science and Technology
基金
上海市科技攻关项目(08110511600)
上海市教委重点学科项目(J50503)
关键词
化学水浴法
In2S3薄膜
PH值
浓度比
溶液温度
Chemical bath disposition, In2S3 thin film, PH value, Concentration ratio, Solution temperature
