摘要
阐述了AlN陶瓷的烧结原理 ,分析了烧结工艺参数对大面积AlN基板性能的影响 ,成功研制出了高热导率(190W /m·K)、大面积 (14 0mm× 90mm)、翘曲度为 2 0 μm/5 0mm的AlN陶瓷基板。
The sintered mechanism of AlN ceramics is expounded in this paper.The effects of sintering technology parameters on property of the large area AlN substrate were investigated . An aluminum nitride ceramic substrate has been successfully developed, which has a high thermal conductivity (190 w/m·K) and large substrate area(140mm×90mm).The camber of Aluminum Nitride substrates is 20μm/mm.
出处
《真空电子技术》
2002年第3期60-63,共4页
Vacuum Electronics
关键词
氮化铝陶瓷
烧结
平整性
热导率
Aluminum Nitride ceramics
Sinter
Flatness
Thermal conductivity
