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激光脉冲沉积法在Si(100)上生长c轴择优取向的LiNbO_3晶体薄膜及其性能 被引量:4

Growth and Characterization of c-Or ient LiNbO_3 Filmson Si(100) by Pulse Laser Deposition
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摘要 采用激光脉冲沉积 ( PL D)法在 Si( 10 0 )衬底上生长得到了完全 c轴择优取向的 L i Nb O3( L N)薄膜 ,X射线衍射分析表明 L N( 0 0 6)衍射峰的半峰宽为 0 .3 5°.利用棱镜耦合器 ,激光可以被耦合到 L N薄膜中 ,形成 TE和 TM模式的光波导 .测得 L N薄膜的折射率 n0 为 2 .2 85 ,薄膜的厚度为 0 .199μm. Fully c-orient LiNbO_3 (LN) films are grown o n Si(100) or SiO_2 substrate by pulse laser deposition (PLD),and the full width at half maximum of the LN (006) diffraction is only 0.35° by X-ray diffracti on.Laser can be coupled into the LN film by prism coupler and the TE or TM mode optical waveguide is formed.By this method,the refractive index n_0 (2.285 ) and thickness (0.199μm) of the film are determined.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第5期488-491,共4页 半导体学报(英文版)
基金 国家自然科学基金重大研究规划资助项目 (编号 :90 10 10 0 9)~~
关键词 光波导 铌酸锂薄膜 激光脉冲沉积法 铁电材料 optical waveguide LiNbO_3 film pulse laser deposition
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参考文献13

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