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ZnO变阻器的单晶界组成和性能

Composition and Properties of Single Grain Boundaries within a ZnO Varistor
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摘要 利用籽晶法制备了大晶粒尺寸的低压 ZnO 变阻器,借助电子微探针和机械微探针分别研究了这种 ZnO陶瓷样品的单晶界元素组成和伏安特性。发现存在3种非线性伏安特性,击穿电压分别为1.8、3.5和6.0V;对应子晶粒表面直接接触的晶界、富锑的晶界和富铋的晶界。偏压下的 ZnO 陶瓷电容测量结果也表明存在3种不同势垒高度的晶界。 A low-voltage ZnO varistor with large grain size was prepared by using seedgrain method.With the aid of electronic and mechanical probe method,the chemicalcomposition and voltage-current characteristic of the single grain boundaries werestudied.Three kinds of typical nonlinear Ⅴ-Ⅰ characteristics were found in the ZnOvaristor,and the values of breakdown voltage were 1.8,3.5 and 6.0 Ⅴ respective-ly corresponding to direct grain-contacting,Sb-rich and Bi-rich grain boundaries.Capacitance variation with applied eletric field also showed the ZnO varistor havingthree kinds of typical grain boundaries.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 1991年第2期192-195,共4页 Journal of Inorganic Materials
关键词 氧化锌 变阻器 晶界 晶粒 陶瓷 ZnO varistor Grain boundary Grain
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