期刊文献+

热处理对ZnO变阻器电学性能影响的研究

Study on the Effect of Heat Treatment on the Electric Property of ZnO Varistors
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摘要 采用高能球磨的方法制备了ZnO和添加物(MnO,Sb2O3,CoO,Cr2O3,Bi2O3)的前驱超细粉体,采用固相反应烧结技术在1 140℃进行2 h烧结制备出ZnO陶瓷变阻器。用SEM,XRD研究了不同退火温度对ZnO压敏陶瓷的显微形貌、相结构,伏安非线性特性和微观电性能的影响。从阻抗分析,激活能和介电损耗与频谱关系分析证明了600~800℃热处理时晶界由于β-Bi2O3向γ-Bi2O3的相变引起的体积膨胀而变宽,导致晶界电子陷阱浓度降低,从而使得势垒高度下降,漏电流增加。 The superfine powders of ZnO and composite oxides (MnO, Sb2O3, CoO, Cr2O3, Bi2O3) were ground with high energy ball milling. Then the ZnO ceramic varistors were prapared by sintering at 1140 ℃ for 2h using solid state reaction technology. The effect of different annealing temperature on microstructure, phase texture, nonlinear property and micro electric properties were studied using SEM and XRD. Impedance test, activation energy test and dissipation factor-frequency spectrum dependence analisis proved that at heat treatment of 600-800 ℃ grain boundary widened caused by volume expansion due to β-Bi2O3 phase transition to γ-Bi2O3, leading to the reducing of grain boundary electron trap concentration,making the barrier height drop, and leakage current increase.
出处 《电瓷避雷器》 CAS 北大核心 2009年第5期28-32,35,共6页 Insulators and Surge Arresters
基金 国家自然科学基金资助项目(10876041和气075218) 上海市产业技术创新重大项目(07XI-023) 863项目(2006AA03Z437)
关键词 氧化锌 变阻器 热处理 ZnO varistors heat treatment
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参考文献19

  • 1INADA M. Effects of Heat-treatment on crystal phases, micmstrueture and electrical properties of nonohmic zinc oxide ceramics [J]. Japanese Journal of Applied Physics, 1979, 18: 1439-1446. 被引量:1
  • 2LI JIANYING, LI Bo, ZHAI Dengyun, et al. Dielectric response on the critical breakdown field in ZnO varistors [J]. J. Phys. D: Appl. Phys. 2006, 39: 4969-4974. 被引量:1
  • 3陈志清,谢恒堃..氧化锌压敏瓷及其在电力系统中的应用[M].北京:水利电力出版社,1992:217.
  • 4GUPTA T K. MILLER A C. Improved stability of the ZnO varistor via donor and acceptor doping at the grain boundary[J]. Journal of Materials Research: 1988, 3(4): 745- 754. 被引量:1
  • 5LEE J, MASHEK J J, MASON T O, et al. Impedance spectroscopy of grain boundaries in nanophase ZnO [J ]. Journal of Materials Research: 1995, 10(9): 2295-2300. 被引量:1
  • 6BERNIK S, DANEU N, RENIK A. Inversion boundary induced grain growth in TiO2 or Sb2O3 doped ZnO-based varistor ceramics[J].Joumal of the European Ceramic Society: 2004, 24(15-16): 3703-3708. 被引量:1
  • 7NAHM Choon-W. Effect of sintering temperature on varistor properties and aging characteristics of ZnO-V2O5- MnO2 ceramics[J]. Ceramics International: 2009, 35(7): 2679-2685. 被引量:1
  • 8SUN Hong, ZHANGLiangying, YAOXi.Electrical nonuniformity of grain boundaries within ZnO varistors[J]. Journal of the American Ceramic Society: 1993, 76(5): 1150-1155. 被引量:1
  • 9CHEN C-S, KUO C-T, LIN I-N. Improvement on the degradation of microwave sintered ZnO varistors by postannealing[J]. Journal of Materials Research: 1998,13(6): 1560-1567. 被引量:1
  • 10ALIM M A. Admittance-Frequency Response in Zinc Oxide Varistor Ceramics[J]. Journal of the American Ceramic Society: 1989, 72(1): 28-32. 被引量:1

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