摘要
本文利用红外激光光弹性仪,采用光测弹性力学中的Senarmont补偿法,解决了硅晶片小数级条纹值定量测量问题.在考虑硅晶体光弹性效应各向异性的基础上,实测了(111)、(100)单晶硅片的原始应力及氧化应力.对硅晶片原始应力的产生与消除、氧化应力在硅中的分布、氧化应力与氧化层厚度的关系、氧化应力随时间的变化等进行了研究.
Fractional order fringes of stress in silicon wafer are measured by Senarmont compensation of photoelasticity with the help of infrared laser photoelasticity system. Taking account of photoelastio anisotropy of silicon crystal, the original stress and oxidic stress in (111). (100) silicon wafers are quantitatively determined. The production and elimination of the original stress, the distribution of the oxidic stress, the relationship between the oxidic stress and the thickness of oxide film, the variation of the oxidic stress with time in silicon wafer, etc. are studied.
出处
《红外研究》
SCIE
EI
CAS
CSCD
北大核心
1989年第3期203-209,共7页
基金
国家科学基金~~
