摘要
碳化硅作为第三代半导体材料,在微纳机械电子系统中有着广阔的应用前景。通过阳极键合技术实现玻璃与碳化硅的直接连接,SEM测试结果表明玻璃与碳化硅键合界面平整光滑无缺陷,通过TEM对键合界面进一步检测发现界面处碳化硅被氧化,玻璃与碳化硅实现化学键连接。通过SEM观察经氢氟酸腐蚀后界面的微观形貌发现键合界面处玻璃基体内形成Na+耗尽层,研究发现随着键合温度和电压的增大Na+耗尽层宽度在增大,最大达到了1.1μm。在键合过程中,键合电流的变化分为急速上升、急速下降和相对稳定三个阶段。通过拉伸试验发现玻璃-碳化硅接头的断裂起源于键合界面处,进而延伸至玻璃基体内,拉伸强度随着键合温度和电压的增大而增大,在键合条件为500℃、1000 V时抗拉强度达到18.2 MPa。
As a typical kind of material in third-generation semiconductors,silicon carbide is widely used in Micro Electro Mechanical system.Glass and silicon carbide are successfully bonded together through an anodic bonding process.SEM testing results showed that the glass-SiC bonding interface is smooth and well-defined,and TEM testing results confirmed that the interface is tight and no defects could be found in the bonding interface,metallurgical bonding between the glass and silicon carbide is observed.After an etching process,a Na+depletion layer is found at the glass substrate.It is found that with the increment of the bonding temperature or voltage,the thickness of the Na+depletion layer generated at the interface gradually increased,with a maximum of 1.1μm.During the bonding process,the bonding current is characterized by three stages:the rising stage,the falling stage and the stable stage.Tensile testing results indicated that the fracture occurred at the bonding interface,then extends to glass substrate.The bonding strength increased with the increment of the bonding temperature and voltage with a maximum strength of 18.28 MPa at 500℃and 1000 V.
作者
刘伟
胡利方
郑植
高伟
丑昭
成晓
王勇
LIU Wei;HU Lifang;ZHENG Zhi;GAO Wei;CHOU Zhao;CHENG Xiao;WANG Yong(College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024)
出处
《机械工程学报》
EI
CAS
CSCD
北大核心
2024年第16期151-159,共9页
Journal of Mechanical Engineering
基金
国家自然科学基金资助项目(52375368,51875387)。
关键词
阳极键合
耗尽层
玻璃
碳化硅
力学性能
anodic bonging
depletion layer
glass
silicon carbide
mechanical properties
