摘要
功率器件结温预测对于器件的寿命评价具有重要意义,而材料的热效应是影响结温预测结果的关键因素之一。基于此,提出了一种考虑热效应的绝缘栅双极型晶体管(IGBT)热网络模型建模方法,可提高IGBT结温预测的准确性。采用经典Foster与Cauer热网络模型转换方法,获取IGBT各层结构热阻和热容,建立芯片Si热阻-温度的函数模型,对比模型计算值与实验结果,验证了热阻-温度函数建模方法的合理性与准确性。最后基于Multisim平台建立了新型IGBT Cauer热网络模型,实现热效应耦合下结温的实时预测。仿真结果表明,随着环境温度升高和IGBT功耗增大,材料热效应对结温预测影响就越大,此时新Cauer模型仿真结果更具有参考价值,可为功率器件寿命评价提供更可靠的数据支持。
The junction temperature prediction of power devices is great important for the life evaluation of the device and the thermal effect of materials is one of the key factors affecting the accuracy of prediction results. Based on this,a modeling method of insulated gate bipolar transistor( IGBT) thermal network considering thermal effect was proposed to improve the accuracy of junction temperature prediction. By using the classical Foster and Cauer thermal network model conversion method,the thermal resistance and thermal capacity of IGBT each structure were obtained. The thermal resistance-temperature function model of silicon chip was established by linear fitting,and the rationality and accuracy of the thermal resistance-temperature function modeling method were verified by comparing the calculated values of the model with the experimental results. Finally,based on the Multisim platform,a new IGBT Cauer thermal network model was set up to realize the real-time prediction of the junction temperature under thetemperature coupling. The simulation results show that the effect of the thermal efficiency of the material on the temperature prediction is greater with the increase of the temperature and power consumption of the IGBT,and then the simulation results of the new Cauer model are more valuable and provide more reliable data for the device life evaluation.
作者
申海东
解江
吴雪珂
欧永
Shen Haidong;Xie Jiang;Wu Xueke;Ou Yong(The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology,Guangzhou 510610,China;Guangdong Provincial Key Laboratory of Electronic Information Products Reliability Technology,Guangzhou 510610,China;National Joint Engineering Research Center of Reliability Test and Analysis for Electronic Information Products,Guangzhou 510610,China;Taizhou CEPREI Industrial Technology Research Institute Co.,Ltd.,Taizhou 225500,China)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第12期898-904,共7页
Semiconductor Technology
基金
国家重点研发计划资助项目(2016YFB0901002)
国家科技重大专项资助项目(2016ZX04004006)
广东省科技发展专项资金资助项目(2017B010116004)
